Простий
пошук
Розширений
пошук
Покажчики
Професійний
пошук
Рубрикатор
НБУВ
Розподілений
пошук

Бази даних

Наукова періодика України - результати пошуку

Книжкові видання та компакт-диски
Журнали та продовжувані видання
Автореферати дисертацій
Реферативна база даних
Наукова періодика України
Тематичний навігатор
Авторитетний файл імен осіб
Mozilla Firefox Для швидкої роботи та реалізації всіх функціональних можливостей пошукової системи використовуйте браузер
"Mozilla Firefox"
Вид пошуку
Повнотекстовий пошук
 Знайдено в інших БД:Реферативна база даних (9)
Список видань за алфавітом назв:
A  B  C  D  E  F  G  H  I  J  L  M  N  O  P  R  S  T  U  V  W  
А  Б  В  Г  Ґ  Д  Е  Є  Ж  З  И  І  К  Л  М  Н  О  П  Р  С  Т  У  Ф  Х  Ц  Ч  Ш  Щ  Э  Ю  Я  

Авторський покажчик    Покажчик назв публікацій


Пошуковий запит: (<.>A=Korotyeyev V$<.>)
Загальна кількість знайдених документів : 9
Представлено документи з 1 до 9
1.

Lyaschuk Yu. M. 
Interaction of terahertz electromagnetic field with a metallic grating: Near-field zone [Електронний ресурс] / Yu. M. Lyaschuk, V. V. Korotyeyev // Ukrainian journal of physical optics. - 2012. - Vol. 13, № 3. - С. 142-150. - Режим доступу: http://nbuv.gov.ua/UJRN/UJPO_2012_13_3_5
Попередній перегляд:   Завантажити - 1.23 Mb    Зміст випуску     Цитування
2.

Korotyeyev V. V. 
Peculiarities of THz-electromagnetic wave transmission through the GaN films under conditions of cyclotron and optical phonon transit-time resonances [Електронний ресурс] / V. V. Korotyeyev // Semiconductor physics, quantum electronics & optoelectronics. - 2013. - Vol. 16, № 1. - С. 18-26. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2013_16_1_4
The theory of THz radiation transmission through the film of compensated GaN of cubic modification under action of electric and magnetic fields has been developed. In the THz frequency range, spectra of the dynamic mobility tensor have been obtained for applied steady-state electric fields of several kV/cm and magnetic fields of several T. The spectra of transmission, reflection and loss coefficients have been analyzed for the Voigt configuration used for the applied fields. It has been shown that the transmitted wave becomes elliptically polarized, and the spectra of polarization characteristics such as ellipticity and rotation angle of the large axis of polarization ellipse were investigated under conditions of cyclotron resonance and optical phonon transit-time one. It has been found that, in certain frequency bands, polarization characteristics have the features valid for both resonances. The new optical method based on the analysis of ellipticity and rotation angle spectra is offered for determination of the low-field mobility.
Попередній перегляд:   Завантажити - 1.624 Mb    Зміст випуску    Реферативна БД     Цитування
3.

Korotyeyev V. V. 
Theory of high-field electron transport in the heterostructures AlxGa1-xAs/GaAs/AlxGa1-x with delta-doped barriers. Effect of real-space transfer [Електронний ресурс] / V. V. Korotyeyev // Semiconductor physics, quantum electronics & optoelectronics. - 2015. - Vol. 18, № 1. - С. 1-11. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2015_18_1_3
Steady-state electric characteristics of quantum heterostructures AlxGa1-xAs/GaAs/AlxGa1-xAs with <$Edelta>-doped barriers have been analyzed in this work. It has been shown that at high doping the additional low-conductive channels are formed in the barrier layers. Current-voltage characteristics of the structure were obtained in the wide interval of applied electric fields up to several kV/cm being based on the solution of Boltzmann transport equation. It has been found that in the electric fields higher than 1 kV/cm the effect of exchange of the carriers between the high-conductive channel of the GaAs quantum well and the channels in the AlGaAs barriers becomes essential. This effect gives rise to the appearance of the strongly nonlinear current-voltage characteristics with a portion of negative differential conductivity. The developed model of heterostructure is adequate to those recently fabricated and studied by Prof. Sarbey's group. The obtained results explain some observation of this paper. It has been found that the effect of electron real-space transfer takes place at both low temperatures and room temperatures, which opens perspectives to design novel type nanostructured current controlled devices.
Попередній перегляд:   Завантажити - 563.718 Kb    Зміст випуску    Реферативна БД     Цитування
4.

Syngayivska G. I. 
Elecron transport in crossed electric and magnetic fields under the condition of the electron streaming in GaN [Електронний ресурс] / G. I. Syngayivska, V. V. Korotyeyev // Semiconductor physics, quantum electronics & optoelectronics. - 2015. - Vol. 18, № 1. - С. 79-85. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2015_18_1_16
Попередній перегляд:   Завантажити - 673.749 Kb    Зміст випуску     Цитування
5.

Syngayivska G. I. 
Electrical and high-frequency properties of compensated GaN under electron streaming conditions [Електронний ресурс] / G. I. Syngayivska, V. V. Korotyeyev // Ukrainian journal of physics. - 2013. - Vol. 58, № 1. - С. 40-55. - Режим доступу: http://nbuv.gov.ua/UJRN/Ukjourph_2013_58_1_8
Попередній перегляд:   Завантажити - 804.523 Kb    Зміст випуску     Цитування
6.

Lyaschuk Yu. M. 
Interaction of a terahertz electromagnetic wave with the plasmonic system "grating–2D-Gas". Analysis of features of the near field [Електронний ресурс] / Yu. M. Lyaschuk, V. V. Korotyeyev // Ukrainian journal of physics. - 2014. - Vol. 59, № 5. - С. 495-504. - Режим доступу: http://nbuv.gov.ua/UJRN/Ukjourph_2014_59_5_7
Попередній перегляд:   Завантажити - 1.214 Mb    Зміст випуску     Цитування
7.

Lyaschuk Yu. M. 
Theory of detection of terahertz radiation in hybrid plasmonic structures with drifting electron gas [Електронний ресурс] / Yu. M. Lyaschuk, V. V. Korotyeyev // Ukrainian journal of physics. - 2017. - Vol. 62, № 10. - С. 889-902. - Режим доступу: http://nbuv.gov.ua/UJRN/Ukjourph_2017_62_10_9
Попередній перегляд:   Завантажити - 942.926 Kb    Зміст випуску     Цитування
8.

Korotyeyev V. V. 
Be-ion implanted p-n InSb diode for infrared applications. Modeling, fabrication and characterization [Електронний ресурс] / V. V. Korotyeyev, V. O. Kochelap, S. V. Sapon, B. M. Romaniuk, V. P. Melnik, O. V. Dubikovskyi, T. M. Sabov // Semiconductor physics, quantum electronics & optoelectronics. - 2018. - Vol. 21, № 3. - С. 294-306. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2018_21_3_14
Transport theory for modeling the electric characteristics of high-quality p-n diodes has been developed. This theory takes into account a non-uniform profile of p-doping, finite thickness of the quasi-neutral regions and possible non-uniformity of the bulk recombination coefficient. The theory is based on related solutions of the Poisson equation, drift-diffusion equation and continuity equation with a generation-recombination term taking into account the simple band-to-band generation/recombination model. We have ascertained that the non-uniform profile of p-doping can lead to formation of p-n junctions with a specific two-slope form of the electrostatic barrier and two regions with the high built-in electric fields. We have found that at strong p<^>+-doping the band structure of the InSb p-n junction has the form that can facilitate the emergence of additional mechanisms of current flow due to the tunneling and avalanche effects at the reverse bias. Using the literary data of the electron and hole lifetimes in InSb at cryogenic temperatures, we have found that the coefficient of bulk recombination can have an essential spatial dependence and considerably increases in the space charge region of p-n diode. The theory was applied to our analysis of p-n InSb diodes with p<^>+-doping by using Be-ion implantation performed in ISP NASU. The theory predicts optimal conditions for detection of infrared emission. The technological process of fabrication, processing and testing has been described in details. Theoretically, it has been found that for parameters of the fabricated diodes and at 77 K the dark currents limited by diffusion and generation-recombination mechanisms should be less than 0,1 mu A at the inverse bias of the order of 0,1 V. The measured diode's I-V characteristics were expected to have strong asymmetry, however, dark currents are by one order larger than those predicted by theory. The latter can be associated with additional current mechanisms, namely: tunneling and avalanche effects.
Попередній перегляд:   Завантажити - 2.05 Mb    Зміст випуску    Реферативна БД     Цитування
9.

Korotyeyev V. V. 
Interaction of sub-terahertz radiation with low-doped grating-based AlGaN/GaN plasmonic structures. Time-domain spectroscopy measurements and electrodynamic modeling [Електронний ресурс] / V. V. Korotyeyev, Yu. M. Lyaschuk, V. A. Kochelap, L. Varani, D. Coquillat, S. Danylyuk, S. Brose, S. A. Vitusevich // Semiconductor physics, quantum electronics & optoelectronics. - 2019. - Vol. 22, № 2. - С. 237-251. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2019_22_2_17
We have presented the results of terahertz time-domain spectroscopy measurements and a rigorous electrodynamic modeling of the optical characteristics of grating-based AlGaN/GaN plasmonic structures with low-doped two-dimensional electron gas in the frequency range of 0,1 - 1,5 THz. Two samples with grating aspect ratios (strip width/period) of 2,4/3 and 1,2/1,5 <$Emu>m have been investigated. The measured transmission spectra are reconstructed in the calculations with high accuracy. The transmission spectra for p-polarized incident radiation exhibits Fabri - Perot oscillation behavior due to the optically-thick substrate. The specific values of amplitude and spectral position of the transmission maxima are associated with the coupling of terahertz radiation with 2D electron gas due to plasmon excitations. Both calculations and transmission/reflection measurements demonstrate that plasmonic structures with micro-scaled metallic grating have three-fold increase of non-resonant absorption of terahertz radiation in comparison with the bare heterostructure. The polarization measurements of the transmission spectra of the plasmonic structures well agree with calculations and indicate a well-pronounced filtering effect of the grating for the s-component of the incident electromagnetic wave. The obtained values of the transmission for p- and s-polarized incident radiation demonstrate the high quality of deposited metallic grating with the extinction ratio higher than 80:1 for sub- and few THz frequency range.
Попередній перегляд:   Завантажити - 2.353 Mb    Зміст випуску    Реферативна БД     Цитування
 
Відділ наукової організації електронних інформаційних ресурсів
Пам`ятка користувача

Всі права захищені © Національна бібліотека України імені В. І. Вернадського